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Transistor Specification Selection Guide Gain as an Amplifier Isolated Collector Transistors HBFP-0405 2.4 GHz  18 dB 900 MHz  23dB HBFP-0420  17 dB  22 dB HBFP-0450  13 dB  21 dB Conventional Bipolar Transistors AT-414xx 2.4 GHz  13 dB 900 MHz  18.5 dB AT-415xx  11.5 dB  18 dB AT-640xx  10 dB  17 dB AT-420xx  9 dB  15 dB Microcurrent Bipolar Transistors AT-305xx 2.4 GHz  10.5 dB 900 MHz  15 dB AT-320xx  10 dB  14 dB AT-310xx  9.5 dB  13 dB Driver and Power Bipolar Transistors AT-380xx 2.4 GHz  23 dB 900 MHz  21 dB AT-316xx  9 dB AT-332xx  9 dB AT-364xx  9 dB 0  5 10 15 20 25     Gain [dB]                                                                                                             PHEMTs ATF-36xxx 12 GHz  13.5 dB 4 GHz  19.5 dB 2 GHz  23dB ATF-35xxx 10 GHz  8.5 dB  15 dB  18dB ATF-34xxx 10 GHz  7 dB  14 dB  17.5dB ATF-38xxx 10 GHz  7 dB  12 dB  17 dB ATF-33xxx 8 GHz  6.5 dB  12 dB  15dB MESFETs ATF-26xxx 12 GHz  8.5 dB 4 GHz  15.5 dB 2 GHz  17.5 dB ATF-13xxx  8 dB  15 dB  17 dB ATF-10xxx  7 dB  14 dB  16 dB ATF-21xxx  3 dB   (8 GHz)   12.5 dB   15 dB Power MESFETs ATF-46xxx 8 GHz  8 dB 4 GHz  12 dB 2 GHz  15.5 dB ATF-45xxx  5 dB  11 dB  15 dB ATF-44xxx  3 dB  9 dB  14 dB 0  5 10 15 20 25     Gain [dB]                                                                                                           What: Gain measures the amplification of the transistor. Gain depends on the matching circuit. For an unconditionally stable transistor, use Maximum Available Gain (MAG). For a conditionally stable transistor, use Maximum Stable Gain (MSG). For a low noise amplifier use Associated Gain (Ga). For a power amplifier, use Gain at P out = P 1 dB (G 1dB). Direction: More is better (but above 15 dB, more often leads to stability concerns) Range: 10-15+ dB (may be lower as low as 6 dB for power), decreasing 6 dB/octave with frequency

this page last updated: 20 October 1999