Models are available for the following Schottky diodes:
The parameters are for a single diode (HBAT-5400). Parameters also apply to the individual diodes within multiple diode configurations.
parameter | units | value |
BV (Vbr) | V | 40 |
CJO | pF | 3.0 |
EG | eV | 0.55 |
IBV | A | 10E-4 |
IS | A | 1.0E-7 |
N | - | 1.0 |
RS | ohms | 2.4 |
PB (Vj) | V | 0.6 |
PT (XTI) | - | 2 |
M | - | 0.5 |
The parameters are for a single diode. Parameters also apply to the individual diodes within multiple diode configurations (HSCH-5512 or HSCH-5531).
parameter |
units |
-5316 -5318 | -5312 -5314 -5512 | -5310 | -5330 -5340 -5531 | -5336 -5332 |
BV | V | 5 | 5 | 5 | 5 | 5 |
CJO | pF | 0.2 | 0.13 | 0.09 | 0.09 | 0.13 |
EG | eV | 0.69 | 0.69 | 0.69 | 0.69 | 0.69 |
IBV | A | 10E-5 | 10E-5 | 10E-5 | 10E-5 | 10E-5 |
IS | A | 3E-10 | 3E-10 | 3E-10 | 4E-8 | 4E-8 |
N | - | 1.08 | 1.08 | 1.08 | 1.08 | 1.08 |
RS | ohms | 5 | 9 | 13 | 113 | 9 |
PB (Vj) | V | 0.65 | 0.65 | 0.65 | 0.5 | 0.5 |
PT (XTI) | - | 2 | 2 | 2 | 2 | 2 |
M | - | 0.5 | 0.5 | 0.5 | 0.5 | 0.5 |
The parameters are for a single diode (HSCH-9101 or HSCH-9201). Parameters also apply to the individual diodes within multiple diode configurations.
parameter | units | value |
BV (Vbr) | V | 5 |
CJO | pF | 0.04 |
EG | eV | 1.43 |
IBV | A | 10E-5 |
IS | A | 1.6E-13 |
N | - | 1.2 |
RS | ohms | 5 |
PB (Vj) | V | 0.65 |
PT (XTI) | - | 2 |
M | - | 0.5 |
Because of the high leakage of this diode under reverse bias, it must be modeled as an anti-parallel pair. D1 represents the characteristic of the HSCH-9161 under forward bias and D2 (in the forward direction) gives the V-I curve of the HSCH-9161 under reverse bias..
parameter | units | D1 | D2 |
BV (Vbr) | V | 10 | 10 |
CJO | pF | 0.030 | 0.030 |
EG | eV | 1.42 | 1.42 |
IBV | A | 10E-12 | 10E-12 |
IS | A | 12E-6 | 84E-6 |
N | - | 1.2 | 40 |
RS | ohms | 50 | 10 |
PB (Vj) | V | 0.26 | 0.26 |
PT (XTI) | - | 2 | 2 |
M | - | 0.5 | 0.5 |
See also Product Note #002: HSCH-9161 Diode Model [download pdf file, 12k]
.SUBCKT HSCH9401 1 0
* DIODE MODEL
D1 1 0 DMOD1
* PARASITIC BOND PAD CAPACITANCE
C1 1 0 .011P
.ENDS
.MODEL DMOD1 D IS=500U RS=7 CJO=1F EG=1.42 N=1.2 PB=.65 BV=8 IBV=1E-5
See also Product Note #001: HSCH-9401 Diode Model [pdf file, 11k]
The parameters are for a single diode (HSMS-2700). Parameters also apply to the individual diodes within multiple diode configurations.
parameter | units | value |
BV (Vbr) | V | 25 |
CJO | pF | 6.7 |
EG | eV | 0.55 |
IBV | A | 10E-4 |
IS | A | 1.4E-7 |
N | - | 1.04 |
RS | ohms | 0.65 |
PB (Vj) | V | 0.6 |
PT (XTI) | - | 2 |
M | - | 0.5 |
The parameters are for a single diode (HSMS-2800). Parameters also apply to the individual diodes within multiple diode configurations.
parameter | units | value |
BV (Vbr) | V | 75 |
CJO | pF | 1.6 |
EG | eV | 0.69 |
IBV | A | 10E-5 |
IS | A | 3E-8 |
N | - | 1.08 |
RS | ohms | 30 |
PB (Vj) | V | 0.65 |
PT (XTI) | - | 2 |
M | - | 0.5 |
The parameters are for a single diode (HSMS-2810). Parameters also apply to the individual diodes within multiple diode configurations.
parameter | units | value |
BV (Vbr) | V | 25 |
CJO | pF | 1.1 |
EG | eV | 0.69 |
IBV | A | 10E-5 |
IS | A | 4.8E-9 |
N | - | 1.08 |
RS | ohms | 10 |
PB (Vj) | V | 0.65 |
PT (XTI) | - | 2 |
M | - | 0.5 |
Agilent Technologies is tracking the mean and standard deviation for five key SPICE parameters for this diode. They are n (ideality factor),
IS (saturation current), RS (series resistance), CJO (junction capacitance at zero reverse voltage and 1 MHz) and BV (breakdown voltage).
Measurements are made on 20 samples, randomly selected, from each lot manufactured and the mean and standard deviation data are
obtained and stored. The data shown below are the mean of the mean values of all lots manufactured since November, 1996 and the
standard deviation is that for the mean values of all such lots.
The parameters are for a single diode (HSMS-2820). Parameters also apply to the individual diodes within multiple diode configurations.
SPICE model, Cumulative Data to Jan, 1997
parameter | units | nominal |
mean | std. dev. | % std. dev. |
BV (Vbr) | V | 9 | 26.7 | 1.02 | 3.8% |
CJO | pF | 0.7 | 0.649 | 0.04 | 6.1% |
EG | eV | 0.69 | - | - | - |
IBV | A | 10E-4 | - | - | - |
IS | A | 2.2E-8 | 1.48E-8 | 3.84E-9 | 25.9% |
N | - | 1.08 | 1.067 | 0.008 | 0.7% |
RS | ohms | 5 | 7.8 | 0.79 | 10.1% |
PB (Vj) | V | 0.56 | - | - | - |
PT (XTI) | - | 2 | - | - | - |
M | - | 0.5 | - | - | - |
In certain applications, the degree of match between two or four diodes in the same package is of importance. The automatic equipment used at Agilent Technologies to assemble
Schottky dice into plastic packages selects chips from adjacent sites on the wafer, thus insuring the highest degree of match. Twenty HSMS-2825 diode pairs
from one lot were measured and their five key SPICE parameters extracted. Listed below are the mean value for all 40 diodes, the mean
D or difference between the two diodes in a package and this difference expressed as a percent of the mean value.
Note that the mean values listed below are slightly different from those given in the table above since they represent a single lot of diodes. The majority of
D for CJO is due to the inability to measure capacitance in picofarads to three decimal places.
Diode Pair Data
parameter | units | mean value |
mean D | D as % |
BV (Vbr) | V | 26.6 | 0.13 | 0.24% |
CJO | pF | 0.74 | 0.018 | 1.2% |
IS | A | 2.42E-8 | 1.79E-9 | 3.7% |
N | - | 1.079 | 0.0084 | 0.39% |
RS | ohms | 7.6 | 0.04 | 0.30% |
The parameters are for a single diode (HSMS-2850). Parameters also apply to the individual diodes within multiple diode configurations.
parameter | units | value |
BV (Vbr) | V | 3.8 |
CJO | pF | 0.18 |
EG | eV | 0.69 |
IBV | A | 3.0E-4 |
IS | A | 3.0E-6 |
N | - | 1.06 |
RS | ohms | 25 |
PB (Vj) | V | 0.35 |
PT (XTI) | - | 2 |
M | - | 0.5 |
The parameters are for a single diode (HSMS-2860). Parameters also apply to the individual diodes within multiple diode configurations.
parameter | units | value |
BV (Vbr) | V | 7 |
CJO | pF | 0.18 |
EG | eV | 0.69 |
IBV | A | 10E-5 |
IS | A | 5.0E-8 |
N | - | 1.08 |
RS | ohms | 5 |
PB (Vj) | V | 0.65 |
PT (XTI) | - | 2 |
M | - | 0.5 |
The parameters are for a single diode (HSMS-8101). Parameters also apply to the individual diodes within multiple diode configurations.
parameter | units | value |
BV (Vbr) | V | 7.3 |
CJO | pF | 0.18 |
EG | eV | 0.69 |
IBV | A | 10E-5 |
IS | A | 4.6E-8 |
N | - | 1.09 |
RS | ohms | 6 |
PB (Vj) | V | 0.5 |
PT (XTI) | - | 2 |
M | - | 0.5 |
FC | - | 0.5 |
TT | - | 0 |
The parameters are for a single diode. Parameters also apply to the individual diodes within multiple diode configurations.
parameter |
units |
5082-2207 5082-2209 |
5082-2765 5082-2774 5082-2785 5082-2794 |
5082-2830 |
|
BV (Vbr) | V |
5 | 5 | 10 |
CJO | pF |
0.20 | 0.20 | 4 |
EG | eV |
0.69 | 0.69 | 0.69 |
IBV | A |
10E-5 | 10E-5 | 10E-5 |
IS | A |
3 x 10E-10 | 4 x 10E-10 | 2 x 10E-10 |
N | - |
1.08 | 1.08 | 1.08 |
RS | ohms |
5 | 6 | 6 |
PB (Vj) | V |
0.65 | 0.5 | 0.65 |
PT (XTI) | - |
2 | 2 | 2 |
M | - |
0.5 | 0.5 | 0.5 |
parameter | units | value |
BV (Vbr) | V | 35 |
CJO | pF | 0.7 |
EG | eV | 0.69 |
IBV | A | 10E-5 |
IS | A | 7E-9 |
N | - | 1.08 |
RS | ohms | 10 |
PB (Vj) | V | 0.64 |
PT (XTI) | - | 2 |
M | - | 0.5 |
parameter | units | 5082-2800 | 5082-2810 | 5082-2811 |
BV (Vbr) | V | 75 | 25 | 18 |
CJO | pF | 1.6 | 0.8 | 1.0 |
EG | eV | 0.69 | 0.69 | 0.69 |
IBV | A | 10E-5 | 10E-5 | 10E-5 |
IS | A | 2.2E-9 | 1.1E-9 | 0.3E-8 |
N | - | 1.08 | 1.08 | 1.08 |
RS | ohms | 25 | 10 | 10 |
PB (Vj) | V | 0.6 | 0.6 | 0.6 |
PT (XTI) | - | 2 | 2 | 2 |
M | - | 0.5 | 0.5 | 0.5 |
parameter | units | value |
BV (Vbr) | V | 12 |
CJO | pF | 0.9 |
EG | eV | 0.69 |
IBV | A | 10E-5 |
IS | A | 7E-9 |
N | - | 1.08 |
RS | ohms | 10 |
PB (Vj) | V | 0.64 |
PT (XTI) | - | 2 |
M | - | 0.5 |
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