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Models are available for the following ATF series devices:
ATF-34143 packaged FET Statz model parameters for small signal operation.
*ATF-34143 packaged FET model
.SUBCKT ATF34143 16 14 15
RR2 2 1 0.1
RR9 4 3 0.1
RR5 1 5 0.1
LL2 5 SOURCE 0.1nH
LL7 SOURCE 7 0.1nH
LL6 SOURCE 8 0.1nH
RR6 8 2 0.1
RR7 7 2 0.1
RR8 DRAIN 9 0.1
LL5 9 11 0.1nH
LL8 2 15 0.05nH
LL10 15 1 0.1nH
LL1 14 4 0.8nH
LL9 11 16 0.6nH
CC3 11 2 0.15e-12
CC4 1 4 0.15e-12
LL4 3 GATE 0.1nH
*CALL DIE MODEL
XDIE DRAIN GATE SOURCE BATF34143
.ENDS
**** GaAs MESFET MODEL PARAMETERS
.SUBCKT ATF34 D G S
.MODEL BATF34143 GASFET ( LEVEL=2, Vto=-0.95, Beta=0.24, Lambda=0.09, Alpha=4,
+ B=0.8, Tnom=27, Vbi=0.7, Delta=0.2, Cgs=0.8 pF,
+ Cgd=0.16 pF, Rd=0.25, Rg=1, Rs=0.125, Cds=0.04 pF,
+ Is=1 nA, P=0.65)
.ENDS
ATF-34 FET chip Statz model parameters for small signal operation.
MODEL=FET
STATZ FET MODEL
IDS model Gate model Parasitics Breakdown Noise
NFET=yes Delta1=0.2 Rg=1 Gsfwd=1 Fnc=1E6
PFET=no Gscap=3 Rd=0.25 Gsrev=0 R=0.17
Idsmod=3 Cgs=0.8 pF Rs=0.125 Gdfwd=1 C=0.2
Vto=-0.95 Gdcap=3 Lg=.0075 nH Gdrev=0 P=0.65
Beta=0.24 Cgd=0.16 pF Ld=.0075 nH Vjr=1
LAMBDA=0.09 Cds=0.04 pF Ls=.0025 nH
Alpha=4 Crf=0.1 Is=1 nA
B=0.8 Rc=125 Ir=1 nA
Tnom=27 Imax=0.1
Vbi=0.7
ATF-36 FET chip Statz model parameters for small signal operation.
MODEL=FET
IDS model Gate model Parasitics Breakdown Noise
NFET=yes DELTA=0.2 RG=1 GSFWD=1 FNC=01e+6
PFET= GSCAP=3 RD=0.5 GSREV=0 R=0.17
IDSMOD=3 CGS=0.13 pF RS=0.5 GDFWD=1 P=0.55
VTO=-0.55 GDCAP=3 LG=0.03 nH GDREV=0 C=0.2
BETA=0.10 CGD=0.04 pF LD=0.04 nH VJR=1
LAMBDA=0.25 LS=0.01 nH IS=1 nA
ALPHA=5.0 CDS=0.05 pF IR=1 nA
B=1.5 CRF=0.1 IMAX=0.1
TNOM=27 RC=350 XTI=
IDSTC= N=
VBI=0.7 EG=
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