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Models are available for the following INA series devices:
- INA-01: High gain IF amplifier / <500 MHz LNA
- INA-02: High gain LNA for applications to 1 GHz
- INA-03: Low voltage flat to 2 GHz amplifier
- INA-10: DBS/TVRO IF amplifier
- INA-12: self-biased transistor for amplifier applications in 3 V handsets. user defined RF match.
SPICE model
* INA-01 DIE MODEL
* Combine with package model to complete
* DIE MODEL
XNA01 DIEOUT DIEIN DIEGND INA01
.ENDS
* chip model
.SUBCKT INA01 DIEOUT DIEIN DIEGND
RBIAS1 Q2E 14 155 (TC1=-0.8E-3)
RBIAS2 Q3E 14 67 (TC1=-0.8E-3)
RE2 Q3E 15 25 (TC1=-0.8E-3)
RF1 DIEIN 14 1500 (TC1=-0.8E-3)
RF2 Q1C DIEOUT 380 (TC1=-0.8E-3)
LP1 Q1E DIEGND 0.20NH
LP2 15 DIEGND 0.20NH
CP1 Q1E DIEGND 0.35PF
CP2 15 DIEGND 0.50PF
C3 DIEOUT DIEGND 0.25PF
C4 Q1C DIEGND 0.036PF
C5 DIEIN DIEGND 0.086PF
C13 Q2E DIEGND 0.023PF
C14 14 DIEGND 0.036PF
C16 Q3E DIEGND 0.029PF
XNA01Q1 Q1C DIEIN Q1E DIEGND A01Q1
XNA01Q2 DIEOUT Q1C Q2E DIEGND A01Q2
XNA01Q3 DIEOUT Q2E Q3E DIEGND A01Q3
.ENDS
* Q1 distributed base model
.SUBCKT A01Q1 Q1C Q1B Q1E Q1S
RC1 C1 5 10 (TC1=0.6E-3)
RC2 5 Q1C 10 (TC1=0.6E-3)
RB1 Q1B 7 1.1 (TC1=0.8E-3)
RB2 7 8 3.2 (TC1=1.2E-3)
RB3 8 B1 2.7 (TC1=1.8E-3)
RE E1 Q1E 0.24 (TC1=0.6E-3)
Q1 C1 B1 E1 QINA 420
DCD1 Q1B C1 DMOD 572
DCD2 7 C1 DMOD 680
DCD3 8 C1 DMOD 340
DCS Q1S 5 DMOD 2475
.ENDS
* Q2 distributed base model
.SUBCKT A01Q2 Q2C Q2B Q2E Q2S
RC1 C1 5 10 (TC1=0.6E-3)
RC2 5 Q2C 10 (TC1=0.6E-3)
RB1 Q2B 7 1.1 (TC1=0.8E-3)
RB2 7 8 3.2 (TC1=1.2E-3)
RB3 8 B1 2.7 (TC1=1.8E-3)
RE E1 Q2E 0.28 (TC1=0.6E-3)
Q1 C1 B1 E1 QINA 420
DCD1 Q2B C1 DMOD 570
DCD2 7 C1 DMOD 680
DCD3 8 C1 DMOD 340
DCS Q2S 5 DMOD 2475
.ENDS
* Q3 distributed base model
.SUBCKT A01Q3 Q3C Q3B Q3E Q3S
RC1 C1 5 9 (TC1=0.6E-3)
RC2 5 Q3C 8 (TC1=0.6E-3)
RB1 Q3B 7 1.2 (TC1=0.8E-3)
RB2 7 8 3.7 (TC1=1.2E-3)
RB3 8 B1 3.1 (TC1=1.8E-3)
RE E1 Q3E 0.28 (TC1=0.6E-3)
Q1 C1 B1 E1 QINA 360
DCD1 Q3B C1 DMOD 502
DCD2 7 C1 DMOD 583
DCD3 8 C1 DMOD 292
DCS Q3S 5 DMOD2 2409
.ENDS
.MODEL DMOD D(IS=1E-25, CJO=2.4E-16, VJ=.76, M=.53, BV=45)
.MODEL DMOD2 D(IS=1E-25, CJO=1.2E-16, VJ=.80, M=.50, BV=45, RS=1.0E+06)
.MODEL QINA NPN (BF=100, BR=2.5, IS=1.7E-18, VA=20, TF=12PS,
+ CJE=2.4E-15, VJE=1.01, MJE=0.6, PTF=25, XTB=1.818,
+ VTF=6, ITF=3E-4, IKF=1.3E-4, XTF=4, NF=1.03, ISE=5E-15,
+ NE=2.5)
To complete the IC model, the above die model must be combined with one of the following package models.
SPICE model
* INA-02 DIE MODEL
* Combine with package model to complete
* DIE MODEL
XNA02 DIEOUT DIEIN DIEGND INA02
.ENDS
* chip model
.SUBCKT INA02 DIEOUT DIEIN DIEGND
RBIAS1 Q2E 14 155 (TC1=-0.8E-3)
RBIAS2 Q3E 14 67 (TC1=-0.8E-3)
RE2 Q3E 15 25 (TC1=-0.8E-3)
RF1 DIEIN 14 1250 (TC1=-0.8E-3)
RF2 Q1C DIEOUT 475 (TC1=-0.8E-3)
LP1 Q1E DIEGND 0.20NH
LP2 15 DIEGND 0.20NH
CP1 Q1E DIEGND 0.35PF
CP2 15 DIEGND 0.50PF
C3 DIEOUT DIEGND 0.25PF
C4 Q1C DIEGND 0.036PF
C5 DIEIN DIEGND 0.086PF
C13 Q2E DIEGND 0.023PF
C14 14 DIEGND 0.036PF
C16 Q3E DIEGND 0.029PF
XNA02Q1 Q1C DIEIN Q1E DIEGND A02Q1
XNA02Q2 DIEOUT Q1C Q2E DIEGND A02Q2
XNA02Q3 DIEOUT Q2E Q3E DIEGND A02Q3
.ENDS
* Q1 distributed base model
.SUBCKT A02Q1 Q1C Q1B Q1E Q1S
RC1 C1 5 8 (TC1=0.6E-3)
RC2 5 Q1C 17 (TC1=0.6E-3)
RB1 Q1B 7 1.8 (TC1=0.8E-3)
RB2 7 8 5.6 (TC1=1.2E-3)
RB3 8 B1 4.7 (TC1=1.8E-3)
RE E1 Q1E 0.42 (TC1=0.6E-3)
Q1 C1 B1 E1 QINA 240
DCD1 Q1B C1 DMOD 362
DCD2 7 C1 DMOD 389
DCD3 8 C1 DMOD 195
DCS Q1S 5 DMOD 1683
.ENDS
* Q2 distributed base model
.SUBCKT A02Q2 Q2C Q2B Q2E Q2S
RC1 C1 5 10 (TC1=0.6E-3)
RC2 5 Q2C 10 (TC1=0.6E-3)
RB1 Q2B 7 1.1 (TC1=0.8E-3)
RB2 7 8 3.2 (TC1=1.2E-3)
RB3 8 B1 2.7 (TC1=1.8E-3)
RE E1 Q2E 0.24 (TC1=0.6E-3)
Q1 C1 B1 E1 QINA 420
DCD1 Q2B C1 DMOD 572
DCD2 7 C1 DMOD 680
DCD3 8 C1 DMOD 340
DCS Q2S 5 DMOD 2475
.ENDS
* Q3 distributed base model
.SUBCKT A02Q3 Q3C Q3B Q3E Q3S
RC1 C1 5 9 (TC1=0.6E-3)
RC2 5 Q3C 7 (TC1=0.6E-3)
RB1 Q3B 7 1.2 (TC1=0.8E-3)
RB2 7 8 3.7 (TC1=1.2E-3)
RB3 8 B1 3.1 (TC1=1.8E-3)
RE E1 Q3E 0.28 (TC1=0.6E-3)
Q1 C1 B1 E1 QINA 360
DCD1 Q3B C1 DMOD 502
DCD2 7 C1 DMOD 583
DCD3 8 C1 DMOD 292
DCS Q3S 5 DMOD2 2409
.ENDS
.MODEL DMOD D(IS=1E-25, CJO=2.4E-16, VJ=.76, M=.53, BV=45)
.MODEL DMOD2 D(IS=1E-25, CJO=1.2E-16, VJ=.80, M=.50, BV=45, RS=1.0E+06)
.MODEL QINA NPN (BF=100, BR=2.5, IS=1.7E-18, VA=20, TF=12PS,
+ CJE=2.4E-15, VJE=1.01, MJE=0.6, PTF=25, XTB=1.818,
+ VTF=6, ITF=3E-4, IKF=1.3E-4, XTF=4, NF=1.03, ISE=5E-15,
+ NE=2.5)
To complete the IC model, the above die model must be combined with one of the following package models.
SPICE model
* INA-03 DIE MODEL
* Combine with package model to complete
* DIE MODEL
XNA03 DIEOUT DIEIN DIEGND INA03
.ENDS
* chip model
.SUBCKT INA03 DIEOUT DIEIN DIEGND
RBIAS1 Q2E 14 330 (TC1=-0.8E-3)
RBIAS2 Q3E 14 520 (TC1=-0.8E-3)
RE2 Q3E 15 50 (TC1=-0.8E-3)
RF1 DIEIN 14 750 (TC1=-0.8E-3)
RF2 Q1C DIEOUT 700 (TC1=-0.8E-3)
LP1 Q1E DIEGND 0.20NH
LP2 15 DIEGND 0.20NH
CP1 Q1E DIEGND 0.35PF
CP2 15 DIEGND 0.50PF
C3 DIEOUT DIEGND 0.25PF
C4 Q1C DIEGND 0.036PF
C5 DIEIN DIEGND 0.086PF
C13 Q2E DIEGND 0.023PF
C14 14 DIEGND 0.036PF
CCOMP Q3E 20 1.25PF
RES 20 15 25
XNA03Q1 Q1C DIEIN Q1E DIEGND A03Q1
XNA03Q2 DIEOUT Q1C Q2E DIEGND A03Q2
XNA03Q3 DIEOUT Q2E Q3E DIEGND A03Q3
.ENDS
* Q1 distributed base model
.SUBCKT A03Q1 Q1C Q1B Q1E Q1S
RC1 C1 5 6.5 (TC1=0.6E-3)
RC2 5 Q1C 22.5 (TC1=0.6E-3)
RB1 Q1B 7 2.4 (TC1=0.8E-3)
RB2 7 8 7.5 (TC1=1.2E-3)
RB3 8 B1 6.3 (TC1=1.8E-3)
RE E1 Q1E 0.55 (TC1=0.6E-3)
Q1 C1 B1 E1 QINA 180
DCD1 Q1B C1 DMOD 292
DCD2 7 C1 DMOD 292
DCD3 8 C1 DMOD 146
DCS Q1S 5 DMOD 1419
.ENDS
* Q2 distributed base model
.SUBCKT A03Q2 Q2C Q2B Q2E Q2S
RC1 C1 5 5.5 (TC1=0.6E-3)
RC2 5 Q2C 80 (TC1=0.6E-3)
RB1 Q2B 7 8.4 (TC1=0.8E-3)
RB2 7 8 28 (TC1=1.2E-3)
RB3 8 B1 23.5 (TC1=1.8E-3)
RE E1 Q2E 2.1 (TC1=0.6E-3)
Q1 C1 B1 E1 QINA 48
DCD1 Q2B C1 DMOD 123
DCD2 7 C1 DMOD 79
DCD3 8 C1 DMOD 40
DCS Q2S 5 DMOD 756
.ENDS
* Q3 distributed base model
.SUBCKT A03Q3 Q3C Q3B Q3E Q3S
RC1 C1 5 7 (TC1=0.6E-3)
RC2 5 Q3C 27 (TC1=0.6E-3)
RB1 Q3B 7 3.6 (TC1=0.8E-3)
RB2 7 8 11.2 (TC1=1.2E-3)
RB3 8 B1 9.4 (TC1=1.8E-3)
RE E1 Q3E 0.83 (TC1=0.6E-3)
Q1 C1 B1 E1 QINA 120
DCD1 Q3B C1 DMOD 209
DCD2 7 C1 DMOD 198
DCD3 8 C1 DMOD 99
DCS Q3S 5 DMOD2 1092
.ENDS
.MODEL DMOD D(IS=1E-25, CJO=2.4E-16, VJ=.76, M=.53, BV=45)
.MODEL DMOD2 D(IS=1E-25, CJO=1.2E-16, VJ=.80, M=.50, BV=45, RS=1.0E+06)
.MODEL QINA NPN (BF=100, BR=2.5, IS=1.7E-18, VA=20, TF=12PS,
+ CJE=2.4E-15, VJE=1.01, MJE=0.6, PTF=25, XTB=1.818,
+ VTF=6, ITF=3E-4, IKF=1.3E-4, XTF=4, NF=1.03, ISE=5E-15,
+ NE=2.5)
To complete the IC model, the above die model must be combined with one of the following package models.
SPICE model
* DIE MODEL
XNA10 DIEOUT DIEIN DIEGND INA10
.ENDS
* chip model
.SUBCKT INA10 DIEOUT DIEIN DIEGND
RE1 Q1E 11 6 (TC1=-0.8E-3)
RE2 Q4E 15 40 (TC1=-0.8E-3)
RBIAS1 DIEIN 11 1150 (TC1=-0.8E-3)
RBIAS2 Q2E 15 600 (TC1=-0.8E-3)
RBIAS3 Q3E 15 200 (TC1=-0.8E-3)
RF1 DIEIN Q3E 1200 (TC1=-0.8E-3)
RF2 Q1C DIEOUT 500 (TC1=-0.8E-3)
LP1 11 DIEGND 0.15NH
LP2 15 DIEGND 0.15NH
CP1 11 DIEGND 0.35PF
CP2 15 DIEGND 0.35PF
COUT DIEOUT DIEGND 0.15PF
CIN DIEIN DIEGND 0.15PF
XNA10Q1 Q1C DIEIN Q1E Q405
XNA10Q2 DIEOUT Q1C Q2E Q406
XNA10Q3 DIEOUT Q2E Q3E Q410
XNA10Q4 DIEOUT Q3E Q4E Q420
.ENDS
* transistor models
.MODEL q405 NPN BF=100 IS=2.0E-16 VA=20
+ BR=2.5 ME=0.6 NF=1.03 PTF=25
+ TF=1.2E-11 CJE= 2.9E-13 XTF=4 IK=1.6E-02
+ PE=1.01 ISE=6.0E-13 NE=2.5 VTF=6
+ XTB=1.818 ITF=3.6E-02 RB=24.15 RE=0.83
+ RC=25.22 CJC=1.2E-13 CJS=1.5E-13 XCJC=0.20
+ PS=0.80 MS=0.5 PC=0.76 MC=0.53
.MODEL q406 NPN BF=100 IS=2.4E-16 VA=20
+ BR=2.5 ME=0.6 NF=1.03 PTF=25
+ TF=1.2E-11 CJE=3.5E-13 XTF=4 IK=1.9E-02
+ PE=1.01 ISE=7.2E-13 NE=2.5 VTF=6
+ XTB=1.818 ITF=4.3E-02 RB=20.15 RE=0.69
+ RC=22.80 CJC=1.5E-13 CJS=1.6E-13 XCJC=0.20
+ PS=0.80 MS=0.5 PC=0.76 MC=0.53
.MODEL q410 NPN BF=100 IS=4.0E-16 VA=20
+ BR=2.5 ME=0.6 NF=1.03 PTF=25
+ TF=1.2E-11 CJE=5.8E-13 XTF=4 IK=3.2E-02
+ PE=1.01 ISE=1.2E-12 NE=2.5 VTF=6
+ XTB=1.818 ITF=7.2E-02 RB=12.13 RE=0.42
+ RC=10.10 CJC=2.3E-13 CJS=2.1E-13 XCJC=0.21
+ PS=0.80 MS=0.5 PC=0.76 MC=0.53
.MODEL q420 NPN BF=100 IS=9.9E-16 VA=20
+ BR=2.5 ME=0.6 NF=1.03 PTF=25
+ TF=1.2E-11 CJE=1.4E-12 XTF=4 IK=8.0E-02
+ PE=1.01 ISE=3.0E-12 NE=2.5 VTF=6
+ XTB=1.818 ITF=1.8E-01 RB=4.86 RE=0.17
+ RC=13.15 CJC=5.5E-13 CJS=4.0E-13 XCJC=0.22
+ PS=0.80 MS=0.5 PC=0.76 MC=0.53
To complete the IC model, the above die model must be combined with the following package model.
SPICE model
*INA-12063 Macromodel
*Version 1.0, March 1997
*Connections: IBias
* | Gnd2
* | | In
* | | | Vd
* | | | | Gnd1
* | | | | | Out & Vd
* | | | | | |
.subckt INA12 1 2 3 4 5 6
LB1 3 10 1.5n
LB2 6 8 1.5n
LE 11 12 1.2n
C1 10 8 75f
C2 6 5 0.4p
C3 13 5 1n
R1 4 9 4.7k
R2 9 10 2k
RE 12 13 2.5
D1 9 2 bias_diode 1
D2 1 14 bias_diode 200
Vsense 14 2 DC 0
F1 13 2 VSENSE 10.0
Q1 8 10 11 A2_31020
.model A2_31020 npn(is=4.04E-16 ise=1.43E-12 isc=2.74E-12
+iss=4.6E-13 ne=2.0 nc=2.0 nf=1.03 nr=1.0 ns=1.0 vaf=2.2E1
+ikf=3.43E-2 ikr=1.05E-1 bf=1.29E2 br=5.14 rb=1.615E1
+rbm=5 re=9.5E-1 rc=3.1 cje=3.65E-13 mje=4E-1 vje=8.5E-1
+fc=8E-1 cjc=1.42E-13 mjc=5E-1 vjc=7.5E-1 xcjc=4.04E-1
+cjs=1.53E-13 mjs=5E-1 vjs=7E-1 tf=9.5E-12 tr=1.6E-9
+itf=6.87E-2 xtf=3.15 ptf=1.8E1 xti=8 xtb=2.2)
.model bias_diode d(is=1E-14)
.ends
example use
* This PSPICE deck provides an example of how to use the INA-12 macro model
* The application is a 900MHz LNA as shown in Figure 32 of the datasheet
* Agilent Technologies, March 1997
*
Vsupply Vcc 0 3.0
Vin 2 0 DC 0 AC 2 SIN(0 14.1E-3 900E6)
X1 1 0 5 Vcc 0 6 INA12
Rbias Vcc 1 5.6k
RS 2 3 50
RL 7 0 50
R1 Vcc 6 470
L1 4 5 8.2n
L2 Vcc 6 8.2n
C1 3 4 100p
C2 6 7 2.2p
.OP
.AC LIN 501 0.1G 5.1G
*.TRAN 1n 20n 0n 10p
.include d:\pspice\ckt\hp_rfic.lib
.END
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