www.Agilent-Tech.comProductsServices & Supportwww.HP.com
Agilent-Technologies LogoSemiconductor Products
Search
Assistance
SPG home
 HPRFhelp home
 Design Info
  models

 SPICE models
  Schottkys
  PINs
  BJTs
  FETs
  MSAs
  INAs
  IAMs
  AT packages
  MSA packages
  INA packages
 MDS models
 ADS models
 Equivalent Ckts

 What's New
 How to Buy
 
SPICE Library: PIN Diode Models

 APLAC Models are available for the following PIN diodes. SPICE models are not available for Agilent Technologies PIN diodes as SPICE does not model carrier lifetime, a critical parameter for PIN diodes.


HSMP-380x Model

[ top ]

APLAC Limited PIN Diode Model

The APLAC model predicts the RF resistance of a PIN diode chip under all bias conditions, and is based on the article SPICE CIRCUIT YIELDS RECIPE FOR PIN DIODE, Joe Walston, Microwaves & RF - November 1992.

APLAC MODEL LIMITATIONS:
Caution!
  • The model can be used to predict the r.f. resistance and forward voltage. It does not give predictions of distortion.
  • A PIN diode only behaves reliably as a variable resistor at frequencies above 10fc, where fc = 1/2pt and t is the minority carrier lifetime.
  • The capacitance of a PIN diode does vary with the reverse voltage applied however the APLAC model only allows a fixed value.
  • APLAC uses carrier lifetime (t) as an approximation for transit time (TT).

HSMP-380x Limited APLAC Model

D1 uses the standard SPICE diode model, and is described by Is, N, and TT. Rs in the standard model is replaced by the external network of Rmin, Rmax, and Rvar. The parameters are for a single diode (HSMP-3800). Parameters also apply to the individual diodes within multiple diode configurations.

schematic

parameter

unitsdescriptionvalue
Rmaxohmmaximum r.f. resistance10000
Rminohmminimum r.f. resistance2
K-resistance curve fitting exponent1.015
A-resistance curve fitting constant0.0434
LnHconnection inductance2
CpFdiode capacitance at r.f. frequency0.3
IsAdiode saturation current3.5E-9
N-diode ideality factor2.062
TTnsectransit time (carrier lifetime)1800


HSMP-381x Model

[ top ]

APLAC Limited PIN Diode Model

The APLAC model predicts the RF resistance of a PIN diode chip under all bias conditions, and is based on the article SPICE CIRCUIT YIELDS RECIPE FOR PIN DIODE, Joe Walston, Microwaves & RF - November 1992.

APLAC MODEL LIMITATIONS:
Caution!
  • The model can be used to predict the r.f. resistance and forward voltage. It does not give predictions of distortion.
  • A PIN diode only behaves reliably as a variable resistor at frequencies above 10fc, where fc = 1/2pt and t is the minority carrier lifetime.
  • The capacitance of a PIN diode does vary with the reverse voltage applied however the APLAC model only allows a fixed value.
  • APLAC uses carrier lifetime (t) as an approximation for transit time (TT).

HSMP-381x Limited APLAC Model

D1 uses the standard SPICE diode model, and is described by Is, N, and TT. Rs in the standard model is replaced by the external network of Rmin, Rmax, and Rvar. The parameters are for a single diode (HSMP-3800). Parameters also apply to the individual diodes within multiple diode configurations.

schematic

parameter

unitsdescriptionvalue
Rmaxohmmaximum r.f. resistance12000
Rminohmminimum r.f. resistance2.5
K-resistance curve fitting exponent0.987
A-resistance curve fitting constant0.0902
LnHconnection inductance2
CpFdiode capacitance at r.f. frequency0.25
IsAdiode saturation current1.2E-9
N-diode ideality factor1.998
TTnsectransit time (carrier lifetime)1500


HSMP-382x Model

[ top ]

APLAC Limited PIN Diode Model

The APLAC model predicts the RF resistance of a PIN diode chip under all bias conditions, and is based on the article SPICE CIRCUIT YIELDS RECIPE FOR PIN DIODE, Joe Walston, Microwaves & RF - November 1992.

APLAC MODEL LIMITATIONS:
Caution!
  • The model can be used to predict the r.f. resistance and forward voltage. It does not give predictions of distortion.
  • A PIN diode only behaves reliably as a variable resistor at frequencies above 10fc, where fc = 1/2pt and t is the minority carrier lifetime.
  • The capacitance of a PIN diode does vary with the reverse voltage applied however the APLAC model only allows a fixed value.
  • APLAC uses carrier lifetime (t) as an approximation for transit time (TT).

HSMP-382x Limited APLAC Model

D1 uses the standard SPICE diode model, and is described by Is, N, and TT. Rs in the standard model is replaced by the external network of Rmin, Rmax, and Rvar. The parameters are for a single diode (HSMP-3800). Parameters also apply to the individual diodes within multiple diode configurations.

schematic

parameter

unitsdescriptionvalue
Rmaxohmmaximum r.f. resistance5000
Rminohmminimum r.f. resistance0.35
K-resistance curve fitting exponent0.767
A-resistance curve fitting constant0.00825
LnHconnection inductance2
CpFdiode capacitance at r.f. frequency0.8
IsAdiode saturation current1.15E-11
N-diode ideality factor1.641
TTnsectransit time (carrier lifetime)70


HSMP-383x Model

[ top ]

APLAC Limited PIN Diode Model

The APLAC model predicts the RF resistance of a PIN diode chip under all bias conditions, and is based on the article SPICE CIRCUIT YIELDS RECIPE FOR PIN DIODE, Joe Walston, Microwaves & RF - November 1992.

APLAC MODEL LIMITATIONS:
Caution!
  • The model can be used to predict the r.f. resistance and forward voltage. It does not give predictions of distortion.
  • A PIN diode only behaves reliably as a variable resistor at frequencies above 10fc, where fc = 1/2pt and t is the minority carrier lifetime.
  • The capacitance of a PIN diode does vary with the reverse voltage applied however the APLAC model only allows a fixed value.
  • APLAC uses carrier lifetime (t) as an approximation for transit time (TT).

HSMP-383x Limited APLAC Model

D1 uses the standard SPICE diode model, and is described by Is, N, and TT. Rs in the standard model is replaced by the external network of Rmin, Rmax, and Rvar. The parameters are for a single diode (HSMP-3800). Parameters also apply to the individual diodes within multiple diode configurations.

schematic

parameter

unitsdescriptionvalue
Rmaxohmmaximum r.f. resistance5000
Rminohmminimum r.f. resistance1.5
K-resistance curve fitting exponent0.9327
A-resistance curve fitting constant0.0183
LnHconnection inductance2
CpFdiode capacitance at r.f. frequency0.2
IsAdiode saturation current1.49E-9
N-diode ideality factor2.022
TTnsectransit time (carrier lifetime)500


HSMP-386x Model

[ top ]

APLAC Limited PIN Diode Model

The APLAC model predicts the RF resistance of a PIN diode chip under all bias conditions, and is based on the article SPICE CIRCUIT YIELDS RECIPE FOR PIN DIODE, Joe Walston, Microwaves & RF - November 1992.

APLAC MODEL LIMITATIONS:
Caution!
  • The model can be used to predict the r.f. resistance and forward voltage. It does not give predictions of distortion.
  • A PIN diode only behaves reliably as a variable resistor at frequencies above 10fc, where fc = 1/2pt and t is the minority carrier lifetime.
  • The capacitance of a PIN diode does vary with the reverse voltage applied however the APLAC model only allows a fixed value.
  • APLAC uses carrier lifetime (t) as an approximation for transit time (TT).

HSMP-386x Limited APLAC Model

D1 uses the standard SPICE diode model, and is described by Is, N, and TT. Rs in the standard model is replaced by the external network of Rmin, Rmax, and Rvar. The parameters are for a single diode (HSMP-3800). Parameters also apply to the individual diodes within multiple diode configurations.

schematic

parameter

unitsdescriptionvalue
Rmaxohmmaximum r.f. resistance5000
Rminohmminimum r.f. resistance1.5
K-resistance curve fitting exponent0.9327
A-resistance curve fitting constant0.0183
LnHconnection inductance2
CpFdiode capacitance at r.f. frequency0.2
IsAdiode saturation current1.49E-9
N-diode ideality factor2.022
TTnsectransit time (carrier lifetime)500


HSMP-388x Model

[ top ]

APLAC Limited PIN Diode Model

The APLAC model predicts the RF resistance of a PIN diode chip under all bias conditions, and is based on the article SPICE CIRCUIT YIELDS RECIPE FOR PIN DIODE, Joe Walston, Microwaves & RF - November 1992.

APLAC MODEL LIMITATIONS:
Caution!
  • The model can be used to predict the r.f. resistance and forward voltage. It does not give predictions of distortion.
  • A PIN diode only behaves reliably as a variable resistor at frequencies above 10fc, where fc = 1/2pt and t is the minority carrier lifetime.
  • The capacitance of a PIN diode does vary with the reverse voltage applied however the APLAC model only allows a fixed value.
  • APLAC uses carrier lifetime (t) as an approximation for transit time (TT).

HSMP-388x Limited APLAC Model

D1 uses the standard SPICE diode model, and is described by Is, N, and TT. Rs in the standard model is replaced by the external network of Rmin, Rmax, and Rvar. The parameters are for a single diode (HSMP-3800). Parameters also apply to the individual diodes within multiple diode configurations.

schematic

parameter

unitsdescriptionvalue
Rmaxohmmaximum r.f. resistance5000
Rminohmminimum r.f. resistance1
K-resistance curve fitting exponent0.864
A-resistance curve fitting constant0.0486
LnHconnection inductance2
CpFdiode capacitance at r.f. frequency0.4
IsAdiode saturation current1.49E-9
N-diode ideality factor1.947
TTnsectransit time (carrier lifetime)2500


HSMP-389x Model

[ top ]

APLAC Limited PIN Diode Model

The APLAC model predicts the RF resistance of a PIN diode chip under all bias conditions, and is based on the article SPICE CIRCUIT YIELDS RECIPE FOR PIN DIODE, Joe Walston, Microwaves & RF - November 1992.

APLAC MODEL LIMITATIONS:
Caution!
  • The model can be used to predict the r.f. resistance and forward voltage. It does not give predictions of distortion.
  • A PIN diode only behaves reliably as a variable resistor at frequencies above 10fc, where fc = 1/2pt and t is the minority carrier lifetime.
  • The capacitance of a PIN diode does vary with the reverse voltage applied however the APLAC model only allows a fixed value.
  • APLAC uses carrier lifetime (t) as an approximation for transit time (TT).

HSMP-389x Limited APLAC Model

D1 uses the standard SPICE diode model, and is described by Is, N, and TT. Rs in the standard model is replaced by the external network of Rmin, Rmax, and Rvar. The parameters are for a single diode (HSMP-3800). Parameters also apply to the individual diodes within multiple diode configurations.

schematic

parameter

unitsdescriptionvalue
Rmaxohmmaximum r.f. resistance5000
Rminohmminimum r.f. resistance0.5
K-resistance curve fitting exponent0.746
A-resistance curve fitting constant0.0202
LnHconnection inductance2
CpFdiode capacitance at r.f. frequency0.2
IsAdiode saturation current1.68E-11
N-diode ideality factor1.673
TTnsectransit time (carrier lifetime)200

Privacy Statement Terms of Use

this page last updated: 1 October 1999