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FET Nomenclature
 
Name = ATF + geometry + noise figure bin + package

Geometries:
10: 500 micron gate width low noise MESFET
13: 250 micron gate width low noise MESFET
21: 750 micron gate width general purpose MESFET
25: 500 micron gate width general purpose MESFET
26: 250 micron gate width general purpose MESFET
33: 1600 micron gate width high consistency PHEMT
34: 800 micron gate width high consistency PHEMT
35: 400 micron gate width high consistency PHEMT
36: 200 micron gate width high performance PHEMT
38: 800 micron gate width 2V high consistency PHEMT
44: 5000 micron gate width medium power MESFET
45: 2500 micron gate width medium power MESFET
46: 1250 micron gate width medium power MESFET

Noise Figure Bin:
GaAs FETs are typically sold by noise figure bin. In general, low numbers (0,1) equate to superior noise performance devices used as first stage FETs and middle numbers (2,3,4,5) equate to noise performance appropriate for second stage use. Devices with higher number codes (7, 8) are typically used as gain stages or oscillators.

Package
refer to package options

Example:
ATF-10236

ATF: GaAs FET / PHEMT transistor
10: 500 micron low noise process MESFET
2: moderate noise performance (second stage use)
36: surface mount ceramic "micro-x" package

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this page last updated: 20 October 1999