www.Agilent-Tech.comProductsServices & Supportwww.HP.com
Agilent-Technologies LogoSemiconductor Products
Search
Assistance
SPG home
 HPRFhelp home
 Glossary

 Glossary
A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
 Acronyms
A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

 What's New
 How to Buy
 
Pseudomorphic High Electron Mobility Transistor
 
A field effect semiconductor device where complex metalization structures are used to create a junction with higher electron mobility than can be achieved in pure Gallium Arsenide. In simplistic terms, PHEMTs provide a way to get the high mobility of Indium Phosphide on a Gallium Arsenide substrate, thereby avoiding the breakage problems associated with the very brittle Indium Phosphide wafers. The term "pseudomorphic" - literally "false form" - comes from the fact that the very thin semiconductor layer used to form the junction abandons its customary crystal lattice structure and assumes the form of the underlying GaAsS substrate, thus creating a mechanically viable structure.

PHEMT technology is most commonly used to make ultra-low noise devices such as those used in the DBS market, or to make devices for operation at millimeter wave frequencies (i.e. above 20 GHz).

Privacy Statement Terms of Use

this page last updated: 1 October 1999