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Heterojunction Bipolar Transistor (HBT)
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A bipolar junction semiconductor device that employs complex metalization
structures in the junction to significantly increase electron mobility, resulting in a
higher performance transistor. Most present commercial HBT devices are Gallium
Arsenide based, but HBTs based on Germanium-doped Silicon or other structures
are also possible. Most commonly, HBTs are used to create high performance
medium power devices.
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