(GaAs FET)
(Also called GaAs MESFET for Metal Epitaxial Semiconductor Field Effect Transistor).
A field effect transistor with a reverse-biased Schottky-barrier gate fabricated on a gallium arsenide substrate.
Roughly equivalent to a silicon MOSFET, Agilent Technologies GaAs FETs are depletion mode devices. Because charge carriers reach approximately twice the velocity as in silicon, for a given geometry a given gain can be reached at about twice the frequency.
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